3.2 gbps 3.3 v low noise transimpedance amplifier preliminary technical data ADN2880 rev. prc information furnished by analog devices is believed to be accurate and reliable. however, no responsibility is assumed by analog devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent ri ghts of analog devices. trademarks and registered trademarks are the prop erty of their respective owners. one technology way, p.o. box 9106, norwood, ma 02062-9106, u.s.a. tel: 781.329.4700 www.analog.com fax: 781.326.8703 ? 2004 analog devices, inc. all rights reserved. features technology: high performance sige bandwidth: 2.1ghz minimum input noise current density: 8 pahz optical sensitivity: ?24 dbm differential transimpedance: 5000 v/a power dissipation: 75 mw differential output swing: 250 mv p-p input current overload: +3.25 dbm output resistance: 50 ?/side low-freq cutoff: 20 khz on-chip pd filter: r f = 200 ? c f = 20 pf rssi voltage and current ratio: 0.8v/ma die size: 0.7 mm 1.2 mm applications 3.2 gbps optical modules sff-8472 compliant receivers pin/apd-tia receive optical subassembly sonet/gbe/fc optical receivers, transceivers, transponders product description the ADN2880 is a compact, high performance 3.3 v power supply sige transimpedance amplifier (tia) optimized for small-form-factor pluggable (sfp) optical receivers, up to 3.2 gbps sff/spf optical receivers, and meets oc48 sr/ir sensitivity requirements. the ADN2880 is a single-chip solution for detecting photodiode current with a differential output voltage. the ADN2880 features low input referred noise current of 400 na enabling ?24 dbm sensitivity; 2.1 ghz minimum bw enables up to 3.2 gbps operation; +3.25 dbm nominal operation at 10 db extinction ratio. rssi output signal proportional to average input current is available for monitoring and alarm generation. to facilitate assembly in small form factor packages such as a to-46 or to-56 header, the ADN2880 integrates the photodiode filter network on chip and features 20 khz low frequency cutoff without any external components. the ADN2880 chip area is less than 1 mm 2 , operates with a 3.3 v power supply and is available in die form. figure 1. ADN2880 block diagram 1100 ? 50 ? 50 ? 0.85v 5ma 200 ? 20pf out out b gnd gnd cap filt er in vcc vcc_filt er 3.3v 1400 ?
ADN2880 preliminary technical data rev. prc | page 2 of 9 table of contents electrical specifications ................................................................... 3 absolute maximum ratings............................................................ 4 esd caution.................................................................................. 4 pad descri ptions............................................................................... 5 pad layout ..........................................................................................6 pad coordinates ............................................................................6 die information.............................................................................6 assembly recommendations...........................................................7 revision history 07/04revision prb 11/04 C revision c C rssi added.
preliminary technical data ADN2880 rev. prc | page 3 of 9 electrical specifications table 1. parameter conditions 1 min typ max unit dynamic performance bandwidth (bw) 2 ?3 db 2.1 2.3 ghz total input rms noise (i rms ) 2 dc to 3.2 ghz 375 400 na small signal transimpedance (z t ) 100 mhz 4000 5000 6000 v/a low frequency cutoff cap = open cap = 1nf 20 2 khz khz output return loss 2 dc to 3.2 ghz, differential ?20 ?12 db input overload current 3 pavg tbd 3.25 dbm maximum output swing pk-pk diff, i in,pk- pk = 2.0 ma 180 250 350 mv output data transition time 20% to 80% rise/fall time i in,pk- pk = 2.5 ma 55 ps psrr < 10 mhz ?35 db group delay variation 50 mhz to 3.2 ghz tbd ps transimpedance ripple 50 mhz to 3.2 ghz tbd db total jitter 2 10 a < i in,pk- pk 100 a tbd tbd ps 100 a < i in,pk- pk 2.0 a tbd tbd ps deterministic jitter 2 10 a < i in,pk- pk 100 a 4 ps 100 a < i in,pk- pk 2.0 a 8 ps dc performance power dissipation i in,ave = 0 ma 50 75 120 mw input voltage 0.85 v output common-mode voltage dc terminated to vcc vcc C 0.12 v output impedance single-ended 50 ? pd filter resistance r f 200 ? pd filter capacitance c f 20 pf rssi sensitivity i in, ave = 0 ua to 1 ma 0.8 v/ma rssi offset i in, ave = 0 ua tbd mv 1 min/max vcc = +3.3v 0.3v, t ambient = ?40 c to +95 c; typ vcc=3.3v, t ambient = +25c 2 photodiode capacitance c d = 0.7 pf 0.15 pf, photodiode resistan ce = 5 ? input wire bond inductance l in = 0.3nh 0.1nh, output bond wire inductance l out,outb = 0.8nh 0.1nh load impedance = 50 ? (each output, ac-coupled) 3 10 -10 ber, 10db er, 0.85 a/w pin responsivity
ADN2880 preliminary technical data rev. prc | page 4 of 9 absolute maximum ratings table 2. parameters ratings supply voltage (vcc to gnd) 5 v internal power dissipation output short circuit duration tbd maximum input current 10 ma storage temperature range ?65c to +125c operating ambient tempera ture range ?40c to +95c maximum junction temperature 165c die attach temperature (<60 seconds) 450c stresses above those listed under absolute maximum rating may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. esd caution esd (electrostatic discharge) sensitive device. electrosta tic charges as high as 4000 v readily accumulate on the human body and test equipment and can discharge with out detection. although this product features proprietary esd protection circuitry, permanent dama ge may occur on devices subjected to high energy electrostatic discharges. therefore, proper esd precautions are recommended to avoid performance degradation or loss of functionality.
preliminary technical data ADN2880 rev. prc | page 5 of 9 pad descriptions table 3. pad # pad function 1 gnd ground (input return). 2 in current input. bond directly to pd anode. 3 test test probe pad. leave floating. 4 filter filter output. 5 filter filter output 6 gnd ground. 7 rssi voltage output (provides average input current reading) 8 cap low frequency setpoint. connect with 1 nf capacitance to gnd for < 30 khz. 9 gnd ground. 10 gnd ground (output return). 11 outb negative output. drives 50 ohm termination (ac or dc termination). 12 out positive output. drives 50 ohm te rmination (ac or dc termination). 13 gnd ground (output return). 14 gnd ground 15 vccfilter filter supply. connect to v cc to enable on-chip 200 ?*20 pf filter. 16 vcc 3.3 v positive supply. recommended bypass to gnd is 100 pf rf capacitor. 17 vcc 3.3 v positive supply. recommended bypass to gnd is 100 pf rf capacitor. b filter rssi
ADN2880 preliminary technical data rev. prc | page 6 of 9 pad layout figure 2.. pad layout pad coordinates table 4. pad # pad x (um) y (um) 1 gnd ?500 260 2 in ?500 130 3 test ?500 10 4 filter ?500 ?120 5 filter ?500 ?260 6 gnd ?350 ?260 7 rssi ?200 ?260 8 cap ?50 ?260 9 gnd 130 ?260 10 gnd 500 ?260 11 outb 350 ?60 12 out 350 60 13 gnd 500 260 14 gnd 130 260 15 vccfilter ?50 260 16 vcc ?200 260 17 vcc ?350 260 die information die size 0.7mm 1.2mm (edge-edge including 1mil scribe) die thickness 10mils = 0.25mm passivation openings 0.075 mm 0.075 mm (pads 1-8, 9, 10, 13, 15, 16, 17) 0.144mm 0.075mm (pads 9, 11, 12, 14) passivation composition 5000? si 3 n 4 (top) +5000 ? sio 2 (bot) pad composition al/1%cu backside contact b filter rssi
preliminary technical data ADN2880 rev. prc | page 7 of 9 assembly recommendations 560pf 200pf 1000pf vpd vcc outb out figure 3. 5-pin to-46 with external photodiode supply v pd connected through filter pin 1 vendor specific (0.3 mm 0.3 mm) 2.5 gbps photo diode 1 ADN2880 (0.7mm 1.2 mm) analog devices sige 3.2 gbps transimpedance amplifier 1 200 pf rf single-layer capacitor 1 560 pf rf single layer capacitor 1x 1000pf ceramic capacitor notes minimize all gnd bond wire lengths minimize in, out and outb bond wire lengths maintain symmetry in length and orientation between out and outb bond wires maintain symmetry between in and out/outb bond wires
ADN2880 preliminary technical data rev. prc | page 8 of 9 200pf vcc outb out ceramic standoff figure 4. recommended la yout of 4-pin to-46 1 vendor specific (0.3 mm 0.3 mm) 2.5 gbps photo diode 1 ADN2880 (0.7mm 1.2 mm) analog devices sige 3.2 gbps transimpedance amplifier 1 200 pf rf single-layer capacitor 1 ceramic standoff 1x 1000pf ceramic capacitor notes minimize all gnd bond wire lengths minimize in, out and outb bond wire lengths maintain symmetry in length and orientation between out and outb bond wires maintain symmetry between in and out/outb bond wires
preliminary technical data ADN2880 rev. prc | page 9 of 9 ordering guide model temperature package description package option ADN2880xchips-wp -40 o c to 95 o c na tested die ? 2004 analog devices, inc. all rights reserved. trademarks and registered trademarks are the proper ty of their respective companies. pr04945C0C11/04(prc)
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